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A Novel Approach to Semiconductor Electrical Properties - The Advanced Method of Transient Microwave Photoconductivity (AMTMP)

Published online by Cambridge University Press:  10 February 2011

S. Grabtchak  and
M. Cocivera
S. Grabtchak
Affiliation:
Guelph-Waterloo Centre for Graduate Work in Chemistry, University of Guelph, Guelph, Ontario, Canada NIG 2W1
M. Cocivera
Affiliation:
Guelph-Waterloo Centre for Graduate Work in Chemistry, University of Guelph, Guelph, Ontario, Canada NIG 2W1
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Abstract

The advanced method of transient microwave photoconductivity (AMTMP) represents a new method based on cavity perturbation theory, microwave photoconductivity and harmonic oscillator model analysis. AMTMP provides a direct observation of changes to the complex dielectric constant, and free and trapped electron decays can be studied separately. The results obtained for polycrystalline CdSe thin films clearly indicate that a multiple trapping model developed for amorphous materials does not provide a satisfactory description. For SI GaAs the harmonic oscillator model provides a quantitative interpretation. The limitations are discussed for the application of this method to porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 57
Copyright
Copyright © Materials Research Society 1998

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References

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