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Novel Anionic Photoacid Generators (PAGs) and Photoresists for sub 50 nm Patterning by EUVL and EBL

Published online by Cambridge University Press:  01 February 2011

Mingxing Wang ,
Cheng-Tsung Lee ,
Clifford L Henderson ,
Wang Yueh ,
Jeanette M Roberts  and
Kenneth E Gonsalves
Mingxing Wang
Affiliation:
[email protected], UNC-Charlotte, UNC-Charlotte, 9201 University City Blvd, Charlotte, NC, 28223, United States, 1-704-687-8293, 1-704-687-8241
Cheng-Tsung Lee
Affiliation:
[email protected], Georgia Institute of Technology, Atlanta, GA, 30332, United States
Clifford L Henderson
Affiliation:
[email protected], Georgia Institute of Technology, Atlanta, GA, 30332, United States
Wang Yueh
Affiliation:
[email protected], Intel Corp., Hillsboro, OR, 97124, United States
Jeanette M Roberts
Affiliation:
[email protected], Intel Corp., Hillsboro, OR, 97124, United States
Kenneth E Gonsalves
Affiliation:
[email protected], UNC-Charlotte, Department of Chemistry, Charlotte, NC, 28223, United States
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Abstract

A new series of anionic photoacid generators (PAGs), and corresponding polymers were prepared. The thermostability of PAG bound polymers was superior to PAG blend polymers. PAG incorporated into the polymer main chain may improve acid diffusion compared with the PAG blend polymers, which was demonstrated by Extreme Ultraviolet lithography (EUVL) results: the fluorine PAG bound polymer resist gave 45 nm (1:1), 35 nm (1:2), 30 nm (1:3) and 20 nm (1:4) Line/Space as well as 50 nm (1:1) elbow patterned, showed better resolution than the blend sample.

Keywords

lithography (removal)microstructurepolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – , 2006 , 0961-O11-04
Copyright
Copyright © Materials Research Society 2007

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References

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