Hostname: page-component-f554764f5-246sw Total loading time: 0 Render date: 2025-04-16T19:17:26.945Z Has data issue: false hasContentIssue false
  • English
  • Français

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

Published online by Cambridge University Press:  15 February 2011

M. L. Hussein ,
W. Q. Ma  and
G.J. Salamo
M. L. Hussein
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
W. Q. Ma
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
G.J. Salamo
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
Get access

Abstract

Multiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q11.29
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Ye, Z., Campbell, J. C., Chen, Z., Kim, E.T., and Madhukar, A., J. Appl. Phys. 92, 7462 (2002).Google Scholar
2. Liu, H. C., Gao, M., McCaffrey, J., Wasilewski, Z. R., and Fafard, S., Appl. Phys. Lett. 78, 79 (2001)Google Scholar
3. Pattada, B., Chen, Jiayu, Zhou, Qiaoying, and Manasreh, M. O., Hussein, M. L., Ma, W., and Salamo, G. J., Appl. Phys. Lett., Vol. 82, No. 15, 2509 (2003).Google Scholar
4. Moumanis, Kh., Helman, A., Fossard, F., Tchernycheva, M., Lusson, A., Julien, F. H., Damilano, B., Grandjean, N., and Massies, J., Appl. Phys. Lett., Vol. 82, No. 6, 868 (2003).Google Scholar
5. Yu, Heng, Loomis, Richard A., Buhro, William E., Materials Research Society Spring meeting, Q7.4 (2003).Google Scholar
6. Thiele, F., Fuchs, Ch., and Baltz, R. v., Phys. Rev. B 64, 205309 (2001).Google Scholar
7. Franceschetti, A. and Zunger, A., Phys. Rev. B 62, R16 287 (2000).Google Scholar
8. Levine, B. F., J. Appl. Phys. 74, R1 (1993).Google Scholar
9. Phillips, J., Kamath, K, Zhou, X, Chervela, N., and Bhattacharya, P., J. Vac. SCI. Technol. B 16(3), 1343 (1998).Google Scholar
10. Phillips, J., Bhattacharya, P., Kennerly, S., Beekman, D., and Dutta, M., IEEE J of Quantum Electronics 35(6) P. 936 (1999).Google Scholar
11. Asano, T. and Noda, S., Jpn. J. Appl. Phys. 37, p. 6020 (1998).Google Scholar