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Nonvolatile resistive switching characteristics of HfO2 with Cu doping

Published online by Cambridge University Press:  01 February 2011

Weihua Guan ,
Shibing Long ,
Ming Liu  and
Wei Wang
Weihua Guan
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Lab of Nano-fabrication and Novel Devices Integrated Technology, No. 3, BeiTuCheng West Road, ChaoYang District, Beijing, 100029, China, People's Republic of
Shibing Long
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Lab of Nano-fabrication and Novel Devices Integrated Technology, Beijing, 100029, China, People's Republic of
Ming Liu
Affiliation:
[email protected], Institute of Microelectronics, Chinese Academy of Sciences, Lab of Nano-fabrication and Novel Devices Integrated Technology, Beijing, 100029, China, People's Republic of
Wei Wang
Affiliation:
[email protected], University at Albany, College of Nanoscale Science and Engineering, Albany, NY, 12203, United States
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Abstract

In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

Keywords

memoryelectronic materialdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F07-08
Copyright
Copyright © Materials Research Society 2008

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