Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T08:54:20.043Z Has data issue: false hasContentIssue false
  • English
  • Français

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

Published online by Cambridge University Press:  23 April 2013

P. Misra ,
S. P. Pavunny  and
R. S. Katiyar
P. Misra
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR-00936-8377, USA
S. P. Pavunny
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR-00936-8377, USA
R. S. Katiyar
Affiliation:
Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR-00936-8377, USA
Get access

Abstract

Nonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

Keywords

dielectricelectrical propertiesmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1562: Symposium DD – Emerging Materials and Devices for Future Nonvolatile Memories , 2013 , mrss13-1562-dd13.05
Copyright
Copyright © Materials Research Society 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Waser, R. and Aono, M., Nat. Mater. 6, 833 (2007).CrossRefGoogle Scholar
Lopes, J. M. J., Roeckerath, M., Heeg, T., Rije, E., Schubert, J., Mantl, S., Afanas’ev, V. V., Shamuilia, S., Stesmans, A., Jia, Y., and Schlom, D. G., Appl. Phys. Lett. 89, 222902 (2006).CrossRefGoogle Scholar
Pavunny, S. P., Thomas, R., Kumar, A., Murari, N. M., and Katiyar, R. S. J. Appl. Phys. 111, 102811 (2012)CrossRefGoogle Scholar
Li, Kui, Xia, Yidong, Xu, Bo, Gao, Xu, Guo, Hongxuan, Liu, Zhiguo, and Yin, Jiang, Appl. Phys. Lett. 96, 182904 (2010)CrossRefGoogle Scholar
Jung, K., Seo, H., Kim, Y., Im, H., Hong, J. P., Park, J.-W., and Lee, J.-K., Appl. Phys. Lett. 90, 052104 (2007).CrossRefGoogle Scholar
Guan, Weihua, Liu, Ming, Long, Shibing, Liu, Qi, and Wang, Wei, Appl. Phys. Lett. 93, 223506 (2008).CrossRefGoogle Scholar
Frenkel, J., Phys. Rev. 54, 647 (1938).CrossRefGoogle Scholar