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Non-Stationary Photoconductivity of GaN Nanocomposites In Artificial Opal Matrix

Published online by Cambridge University Press:  17 March 2011

M. Niehus ,
S. Koynov ,
R. Schwarz ,
N.A. Feoktistov ,
V.G. Golubev ,
D.A. Kurdyukov  and
A.B. Pevtsov
M. Niehus
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, PORTUGAL Tel: +351-21-841 7775, e-mail:[email protected]
S. Koynov
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, PORTUGAL Tel: +351-21-841 7775, e-mail:[email protected]
R. Schwarz
Affiliation:
Physics Department, Instituto Superior Técnico, IST, P-1096 Lisboa, PORTUGAL Tel: +351-21-841 7775, e-mail:[email protected]
N.A. Feoktistov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, RUSSIA
V.G. Golubev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, RUSSIA
D.A. Kurdyukov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, RUSSIA
A.B. Pevtsov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, RUSSIA
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Abstract

It was recently proposed to use synthetic opals as a host matrix for obtaining 3D arrays of electronic nanodevices [1]. In the present work the opal matrices were infiltrated with GaN. We study electronic properties of opal-GaN, by means of transient photoconductivity (TPC) measurements using 5 ns laser pulses at wavelengths above (266 nm) and below (532 nm) the GaN bandgap (3.4 eV). A broad plateau is observed in the photocurrent decay covering several orders of magnitude. We compare the results with measurements in conventional GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.26
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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