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Nonradiative recombination on Si surfaces during anodic oxidation in fluoride solution

Published online by Cambridge University Press:  03 September 2012

J. Rappich ,
V. Yu. Timoshenko  and
Th. Dittrich
J. Rappich
Affiliation:
Hahn-Meitner-lnstitut, Abt. AP, Rudower Chaussee 5, D-12489 Berlin, Germany.
V. Yu. Timoshenko
Affiliation:
Moscow State University, Physics Department, 119899 Moscow, Russia.
Th. Dittrich
Affiliation:
Technische Universität München, Physik-Department E16, D-85747 Garching, Germany.
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Abstract

The anodic oxidation of p-Si(100) in aqueous NH4F solution is investigated in-situ by photoluminescence (PL) with short N2-laser pulses as a function of pH at constant potential. The PL intensity depends sensitively on the modification of the Si surface and on the change of the oxidation rate during current oscillations. The interruption of the anodic oxidation at the maximum of a current oscillation peak leads to a current transient which shows typical features of oxide removal and hydrogenation for two different oxide thicknesses. This makes it possible to realize an intermediate state of the Si surface with a coexisting hydrophilic (oxide) and hydrophobic (hydrogenated) part.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 51
Copyright
Copyright © Materials Research Society 1997

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References

1 Matsumura, M. and Morrison, S.R.; J. Electrochem. Soc. 147, (1983).Google Scholar
2 Gerischer, H. and Lübke, M., Ber. Bunsenges. Phys. Chem., 92, 573 (1988).Google Scholar
3 Ozanam, F., Chazaviel, J.-N.; Radi, A. and Etman, M.; Ber. Bunsenges. Phys. Chem, 95, 98 (1991).Google Scholar
4 Bitzer, T., Gruyters, M.,Lewerenz, H.J. and Jacobi, K.; Appl. Phys. Lett, 63, 397 (1993).Google Scholar
5 Rappich, J. and Lewerenz, H. J.; J. Electrochem. Soc. 142, 1234 (1995).Google Scholar
6 Rappich, J., Dittrich, Th. and Timoshenko, V. Yu., J. Electrochem. Soc in press.Google Scholar
7 Ozanam, F. and Chazalviel, J.-N.; J. Electron Spectrosc. Relat. Phenom. 64/65, 395 (1993).Google Scholar
8 Rappich, J., Dittrich, Th. and Timoshenko, V. Yu., Ber. Bunsenges. Phys. Chem., in press.Google Scholar
9 Rappich, J., Jungblut, H. Aggour, M. and Lewerenz, H.J.; J. Electrochem. Soc. 141, L99 (1994).Google Scholar
10 Dittrich, Th., Rauscher, S., Bitzer, T., Aggour, M., Flietner, H. and Lewerenz, H.J.; J. Electrochem. Soc. 142, 2411 (1995).Google Scholar
11 Flietner, H., Proc. 7th Conf. Insulating Films on Semiconductors (INFOS) ed. by Eccleston, W.,Uren, M.(Hilger, Bristol 1991), pp. 151–154 and references therein.Google Scholar
12 Rauscher, S., Dittrich, Th., Aggour, M., Rappich, J. Flietner, H. and Lewerenz, H.J.; Appl. Phys. Lett. 66, 3018 (1995).Google Scholar