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Non-Planar Solid Phase Epitaxial Growth Processes in Ion-Implanted GaAs

Published online by Cambridge University Press:  15 February 2011

J. S. Williams ,
F. M. Adams  and
K. G. Rossiter
J. S. Williams
Affiliation:
Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne 3000 (Australia)
F. M. Adams
Affiliation:
Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne 3000 (Australia)
K. G. Rossiter
Affiliation:
Faculty of Engineering, Royal Melbourne Institute of Technology, Melbourne 3000 (Australia)
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Extract

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 400°C or less. In particular, we have investigated the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing for various implant energies and for implant doses above and below the amorphous threshold. Our results indicate the development of a nonplanar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with our observations and recent results from other laboratories, we propose a model for the epitaxial regrowth of amorphous GaAs layers based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 183
Copyright
Copyright © Materials Research Society 1982

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References

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