Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:46:09.647Z Has data issue: false hasContentIssue false

Non-lithographic Nanofabrication Using Porous Alumina Membranes

Published online by Cambridge University Press:  01 February 2011

L. Tian
Affiliation:
[email protected], United States
Z Wu
Affiliation:
[email protected], United States
Latika Menon
Affiliation:
[email protected], Northeastern University, Physics, United States
Get access

Abstract

We describe a fabrication method to prepare highly ordered Si nanopore arrays. A nanoporous alumina template of thickness ∼1μm is prepared by means of anodization of an aluminum film. The template has a highly ordered hexagonal array of pores of diameter ∼50nm. The template is detached from the aluminum layer and placed on a Si substrate. The nanoporous pattern is transferred onto silicon substrate by means of a dry plasma etch process. This produces an array of nanopores in silicon with a diameter of ∼50nm and depth of ∼300nm. We have used such an array to prepare Fe nanopillars inside the pores by means of thermal evaporation. Magnetization versus applied magnetic field measurements for the Fe nanoarrays, demonstrate large perpendicular anisotropy typical of high aspect ratio magnetic nanopillars. The value of coercivity is about 500Oe in the perpendicular direction and 40Oe in the parallel direction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] “Synthesis of Nanowires using Porous Alumina” by Menon, L. in Advances in Nanophase Materials and Nanotechnology (Vol. Quantum Dots and Nanowires) edited by Bandyopadhyay, S. and Nalwa, H. S. (the “Series Editors”), American Scientific Publishers, 2003.Google Scholar
[2] Masuda, H. and Fukuda, K., Science 268, 1466 (1995)Google Scholar
[3] Masuda, H., Hasegawa, F. and Ono, S., J. Electrochem. Soc. 144, L127 (1997)Google Scholar
[4] Crouse, D., Lo, Y.-H., Miller, A. E. and Crouse, M., Appl. Phys. Lett., 76, 49 (2000)Google Scholar
[5] Jianyu, L., Hope, C., Yin, A. and Xu, J., J. Appl. Phys. 91, 2544 (2002)Google Scholar
[6] Kanamori, Y., Hane, K., Sai, H. and Yugami, H., Appl. Phys. Lett. 78, 142 (2001)Google Scholar
[7] Menon, L., Ram, K. Bhargava, Patibandla, S., Aurongzeb, D., and Holtz, M., J.Electrochem Society (2004)Google Scholar
[8] Menon, L., Zheng, M., Zeng, H., Bandyopadhyay, S. and Sellmyer, D.J., J. Electr. Mater. 29, 510 (2000)Google Scholar
[9] AlMawlawi, D., Coombs, N. and Moskovits, M., J. Appl. Phys. 70, 4421 (1991)Google Scholar
[10] Metzger, R. M., Konovalov, V. V., Sun, M., Xu, T., Zangari, G., Xu, B., Benakli, M. and Doyle, W. D., IEEE Trans. Magn., 36, 30 (2000)Google Scholar
[11] Aurongzeb, D., Ram, K. Bhargava, Patibandla, S., Holtz, M. and Menon, L., submitted to Appl. Phys. Lett.Google Scholar