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Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds

Published online by Cambridge University Press:  16 March 2012

Kęstutis Jarašiūnas ,
Ramūnas Aleksiejūnas ,
Tadas Malinauskas ,
Saulius Nargelas  and
Patrik Ščajev
Kęstutis Jarašiūnas
Affiliation:
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, Vilnius, LT-10222 Lithuania Department of Electrical and Computer Engineering, Virginia Commonwealth University, 601 W. Main Str., Richmond, Virginia 23284 USA
Ramūnas Aleksiejūnas
Affiliation:
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, Vilnius, LT-10222 Lithuania
Tadas Malinauskas
Affiliation:
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, Vilnius, LT-10222 Lithuania
Saulius Nargelas
Affiliation:
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, Vilnius, LT-10222 Lithuania
Patrik Ščajev
Affiliation:
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio al. 9-III, Vilnius, LT-10222 Lithuania
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Abstract

Combining interdisciplinary fields of nonlinear optics, dynamic holography, and photoelectrical phenomena, we developed the optical measurement technologies for monitoring the spatial and temporal non-equilibrium carrier dynamics in wide bandgap semiconductors at wide range of excitations (1015 to 1020 cm-3) and temperatures (10 to 800 K).

We explored advantages of non-resonant optical nonlinearities, based on a short laser pulse induced refractive or absorption index modulation (Δn and Δk) by free excess carriers. This approach, based on a direct correlation between the electrical and optical processes, opened a possibility to analyze dynamics of electrical phenomena in “all-optical” way, i.e. without electrical contacts.

Carrier diffusion and recombination processes have been investigated in various wide band gap materials - differently grown GaN, SiC, and diamonds - and their key electrical parameters determined, as carrier lifetime, diffusion coefficient, diffusion length and their dependences on temperature and injected carrier density. The studies provided deeper insight into nonradiative and radiative recombination processes in GaN crystals, revealed diffusion-driven long nonradiative carrier lifetimes in bulk GaN and SiC, disclosed impact of delocalization in InGaN layers, and suggested a trap-assisted Auger recombination in highly-excited InN. Injection and temperature dependent diffusivity revealed a strong contribution of carrier-carrier scattering in diamond and bandgap renormalization in SiC.

Keywords

electrical propertiesoptical propertiesoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o05-03
Copyright
Copyright © Materials Research Society 2012

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References

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