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Nonlinear optical properties of plasma enhanced chemical vapour deposition grown silicon nanocrystals

Published online by Cambridge University Press:  01 February 2011

G. Vijaya Prakash ,
M. Cazzanelli ,
Z. Gaburro ,
L. Pavesi ,
F. Iacona  and
F. Priolo
G. Vijaya Prakash
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
M. Cazzanelli
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
Z. Gaburro
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
L. Pavesi
Affiliation:
INFM and Dipartimento di Fisica, Università di Trento, via Sommarive 14, 38050, Povo, Trento, Italy;
F. Iacona
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica, Università di Catania, Corso Italia 57, 95129 Catania, Italy
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Abstract

We present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ(3) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of χ(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K8.3
Copyright
Copyright © Materials Research Society 2002

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References

[1]. Bisi, O., Ossicini, S., and Pavesi., L., Surface Sci. Rep., 38 (2000), 1 and references thereinGoogle Scholar
[2]. Linnros, J. in “Silicon based Microphotonics: from basics to applications” Ed., Bisi, O., Campisano, S.U., Pavesi, L. and Priolo, F., IOS, Netherlands, (1999) pp. 47 Google Scholar
[3]. Henari, F. Z., Morgenstern, K., Blau, W. J., Karavanski, V. A. and Dneprovskii, V. S., Appl. Phys. Lett., 67, 323 (1995) and references thereinGoogle Scholar
[4]. Lakshmi, S. Vijaya, George, M.A., Grebel, H., Appl. Phys.Lett., 70, 708 (1997)Google Scholar
[5]. Lakshmi, S. Vijaya, Shen, F. and Grebel, H., Appl. Phys. Lett., 71, 3332 (1997)Google Scholar
[6]. Iacona, F., Franzo, G. and Spinella, C., J. Appl. Phys., 87, 1295(2000)Google Scholar
[7]. Prakash, G. Vijaya, et al., J. Nanosci. Nanotech., 1, 159 (2001)Google Scholar
[8]. Prakash, G. Vijaya, Cazzanelli, M., Gaburro, Z., Iacona, F., Franzò, G., Priolo, F. and Pavesi, L.., J.Mod. Optics., 49, (2002) (in press); J. Appy. Phys., (2002) ( in press)Google Scholar
[9]. Sheik-Bahae, M., Said, A.A., Wei, Tai-Huei, Hagan, D. J. and Stryland, E.W. Van, IEEE. J. Qunt. Elec, 26, 760 (1990)Google Scholar
[10]. Bahae, M. Sheik-, Said, A.A. and Van, E.W. Stryland, Opt. Lett., 14, 955 (1989)Google Scholar
[11]. Reitze, D.H., Zang, T.R., Wood, Wm. M., and Downer, M.C., J.Opt. Soc. Am.B.,7, 84, (1990)Google Scholar
[12]. Shen, Y.R. “The principles of nonlinear optics”, Willey, New York, (1984)p.p. 202 Google Scholar
[13]. Wynne, J.J., Phys.Rev., 178, 1295 (1969)Google Scholar
[14]. Vogel, E.M., Weber, M.J., and Krol, D.M., Phys. Chem. Glasses, 32, 231 (1991)Google Scholar
[15]. Chen, R., Lin, D.L., B. and , Mendoza, Phys.Rev.B., 48, 11879 (1993)Google Scholar
[16]. Lettieri, S., Fiore, O., Maddalena, P., Ninno, D., Francia, G. Di and Ferrara., V. La, Opt. Commun., 168, 383 (1999)Google Scholar