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Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes

Published online by Cambridge University Press:  15 February 2011

K. Ueno ,
T. Ozaki ,
H. Koyama  and
N. Koshida
K. Ueno
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
T. Ozaki
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
H. Koyama
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
N. Koshida
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
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Abstract

Some nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 699
Copyright
Copyright © Materials Research Society 1997

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References

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