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Non-Equilibrium Formation Of Silicon Nitride During Both Ball Milling And Ion Bombardment

Published online by Cambridge University Press:  10 February 2011

Z. L. Li ,
J. S. Williams ,
D. J. Llewellyn ,
J. Wong-Leung ,
M. Giersig  and
D. J. Chivers
Z. L. Li
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia.
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia.
D. J. Llewellyn
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia.
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia.
M. Giersig
Affiliation:
Hahn Meitner Institute, Berlin, Germany.
D. J. Chivers
Affiliation:
AEA Technology, Harwell, Didcot, Berks, UK.
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Abstract

Phase evolution during ball milling of Si in NH3 gas and during subsequent annealing has been studied and compared with nitride formation during ion bombardment of Si. X-ray diffraction, differential thermal analysis, Rutherford backscattering and channeling, combustion analysis and transmission electron microscopy have been used as analytical techniques. Results have shown that an amorphous SixNy(Fe) phase forms during milling which transforms into α-Si3N4 and FeSi2 on annealing. During ion bombardment, slightly N-rich Si3N4 is formed but it is mostly crystalline at temperatures between 150 and 450°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 439
Copyright
Copyright © Materials Research Society 1998

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References

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