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Nonequilibrium Charge Carrier Generation - Recombination Mechanisms in CdMnTe Thin Films

Published online by Cambridge University Press:  01 February 2011

Iuliana M. Caraman ,
Sergiu A. Vatavu ,
Valentina Z. Nicorici  and
Petru A. Gasin
Iuliana M. Caraman
Affiliation:
Solid State Physics Department, Faculty of Physics, Al.I.Cuza University, Bd. Carol I, No 11, Iasi, 700506, Romania
Sergiu A. Vatavu
Affiliation:
Faculty of Physics, Moldova State University, 60 A.Mateevici str., Chisinau, MD 2009, Republic of Moldova
Valentina Z. Nicorici
Affiliation:
Faculty of Physics, Moldova State University, 60 A.Mateevici str., Chisinau, MD 2009, Republic of Moldova
Petru A. Gasin
Affiliation:
Faculty of Physics, Moldova State University, 60 A.Mateevici str., Chisinau, MD 2009, Republic of Moldova
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Abstract

The absorption, photoconductivity and photoluminescence spectra of Cd0.5Mn0.5Te thin films, deposited by “flash” evaporation and vapor phase deposition have been analyzed. The energy gap and the energetic position of the recombination levels in CdMnTe thin films for different substrate temperatures have been determined. The investigation results have been compared with the same parameters for CdMnTe single crystals used as evaporation material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.23
Copyright
Copyright © Materials Research Society 2005

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References

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