Hostname: page-component-669899f699-cf6xr Total loading time: 0 Render date: 2025-04-27T00:07:14.527Z Has data issue: false hasContentIssue false
  • English
  • Français

Non-epitaxial, Highly Textured (001) CoPt:B2O3 Composite Films for Perpendicular Recording

Published online by Cambridge University Press:  01 February 2011

M. L. Yan ,
N. Powers  and
D. J. Sellmyer
M. L. Yan
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0113
N. Powers
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0113
D. J. Sellmyer
Affiliation:
Center for Materials Research and Analysis and Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0113
Get access

Abstract

We report the non-epitaxial growth of highly textured (001) CoPt:B2O3 nanocomposite thin films that are deposited directly on thermally-oxidized Si wafers. Multilayers of Co/Pt/Co/B2O3 are deposited followed by appropriate thermal processing. The as-deposited films are disordered fcc CoPt phase, and magnetically soft. After annealing, an (001) orientation of CoPt-ordered grains is developed. The texture development is dependent both on the total film thickness and the annealing process. Nearly perfect (001) texture can be obtained in films with thinner initial layer thicknesses. Strong perpendicular anisotropy is shown to be related to this (001) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 721: Symposia E/J – Texture and Microstructure in Electronic and Magnetic Films – Nanostructural Magnetic Materials for Data Storage , 2002 , E7.6
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Lairson, B. M., Visokay, M. R.,Sinclair, R., andClemens, B. M., Appl. Phys. Lett. 62, 639 (1993).Google Scholar
2. Luo, C. P.,Liou, S. H.,Gao, L.,Liu, Y.,Sellmyer, D. J., Appl. Phys. Lett., 77, 2225 (2000).Google Scholar
3. Yan, M. L.,Zeng, H.,Powers, N., andSellmyer, D. J., J. Appl Phys. 91, 8471(2002).Google Scholar
4. Luo, C. P., Ph.D Dissertation, University of Nebraska (2001).Google Scholar
5. Karanasos, V.,Panagiotopoulos, I.,Niarchos, D.,Okumura, H., andHadjipanayis, G. C., Appl. Phys. Lett. 79, 1255 (2001).Google Scholar
6. Zeng, H.,Yan, M. L.,Powers, N., andSellmyer, D. J., Appl. Phys. Lett., 80, 2350(2002).Google Scholar