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Non-Destructive Method for Simultaneous Mapping of Diffusion Length and Surface Recombination Velocity

Published online by Cambridge University Press:  26 February 2011

Hans-Christoph Ostendorf  and
Arthur L. Endrös
Hans-Christoph Ostendorf
Affiliation:
Siemens Corporate Research and Development, D-81730 Munich, Germany
Arthur L. Endrös
Affiliation:
Siemens Corporate Research and Development, D-81730 Munich, Germany
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Abstract

Bulk and surface recombination are the main material parameters that determine the performance of crystalline silicon solar cells. We present a new method for the nondestructive, simultaneous mapping of the diffusion length and the surface recombination velocity of a silicon wafer. The method uses the hardware of the electrolytical metal tracer (ELYMAT). The separation between bulk and surface recombination is achieved by illuminating the sample with laser beams of two different colors. By solving the diffusion equation for both laser penetration depths the diffusion length and the surface recombination velocity can be calculated from the measured diffusion currents. First experiments are presented which show the basic feasibility of the method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 597
Copyright
Copyright © Materials Research Society 1995

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References

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