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Non-Destructive Characterization of Semiconductors Using Organic Thin Films

Published online by Cambridge University Press:  26 February 2011

Stephen R. Forrest ,
Martin L. Kaplan  and
Paul H. Schmidt
Stephen R. Forrest
Affiliation:
Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA, 90089–0241 (work done at AT&T Bell Laboratories)
Martin L. Kaplan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Paul H. Schmidt
Affiliation:
Digital Equipment Corporation, Hudson, MA 01749 (work done at AT&T Bell Laboratories)
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Abstract

Rectifying junctions prepared by vacuum deposition of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and related compounds on both p- and n-type inorganic semiconducting wafers are used for their non-destructive evaluation. By evaporation of metal contact pads onto the organic layer, we can probe many of the fundamental -bulk and surface properties of the semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 651
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Forrest, S. R., Kaplan, M. L., Schmidt, P. H., Feldraarm, W. and Yanowski, E. Appl. Phys. Lett. 41, 90 (1982).Google Scholar
2. Forrest, S. R., Kaplan, M. L., Schmidt, P. H. J. Appl. Phys. 55, 1492 (1984).Google Scholar
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7. Schmidt, P. H., Forrest, S. R. and Kaplan, M. L. submitted.Google Scholar
8. Aldrich Chemical Co., Milwaukee, Wisconsin.Google Scholar
9. Use of Cp in Eq. (1) is an approximation which leads to negligible error for measurement frequencies ≤MHz or at reverse voitages ≥ |OV|. See Ref. 10.Google Scholar
10. Forrest, S. R. and Schmidt, P. H., J.Appl. Phys., (Dec. 1985).Google Scholar
11. Forrest, S. R., Kaplan, M. L. and Schmidt, P. H., submitted.Google Scholar
12. Krcemer, H., Chein, W.-Y., Harris, J. S. Jr and Edwall, D. D. Appl. Phys. Lett., 36 295 (1980).Google Scholar
13. Stavola, J., Parsey, J. M. Jr, Forrest, S. R., Kaplan, M. L., Schmidt, P. H. and Young, M. S. S. Appl. Phys. Lett., 46, 506 (1985).Google Scholar