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Non-Destructive Characterisation of Rapid Thermally Annealed N+-Doped Polysilicon Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  15 February 2011

R. T. Carline ,
W. Y. Leong ,
A. G. Cullis ,
M. R. Houlton  and
D. A. Hope
R. T. Carline
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, U.K.
W. Y. Leong
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, U.K.
A. G. Cullis
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, U.K.
M. R. Houlton
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, U.K.
D. A. Hope
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, U.K.
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Abstract

The use of spectroscopic ellipsometry (SE) to characterise the effects of rapid thermal annealing on Si implanted with phosphorous and phosphorous with fluorine are presented. Variations in the measured SE spectra with anneal temperature and presence/absence of fluorine are clearly observed. Spectra are successfully modelled using refractive indices which are graded with depth. Comparison with cross-sectional transmission-electron microscopy and secondary ion mass spectroscopy show that the results can be correlated with both the crystallinity and impurity distribution in the poly-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 359
Copyright
Copyright © Materials Research Society 1996

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References

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