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Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

Published online by Cambridge University Press:  16 February 2011

Ingrid De Wolf ,
Jan Vanhellemont  and
Herman E. Maes
Ingrid De Wolf
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium.
Jan Vanhellemont
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium.
Herman E. Maes
Affiliation:
Interuniversity Micro-Electronics Centre (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium.
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Abstract

Micro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 53
Copyright
Copyright © Materials Research Society 1990

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References

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