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Nondestructive Analysis of Current Gain of InP/InGaAs Heterojunction Bipolar Transistor Structures using Photoreflectance Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Hiroki Sugiyama ,
Noriyuki Watanabe ,
Kazuo Watanabe ,
Takashi Kobayashi  and
Kazumi Wada
Hiroki Sugiyama
Affiliation:
NTT Photonics Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Noriyuki Watanabe
Affiliation:
NTT Photonics Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Kazuo Watanabe
Affiliation:
NTT Photonics Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Takashi Kobayashi
Affiliation:
NTT Photonics Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Kazumi Wada
Affiliation:
Department of Materials Science and Engineering, MIT, 77 Massachusetts Ave., Cambridge, MA 02139
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Abstract

InP/InGaAs heterojunction bipolar transistor (HBT) wafers grown by metal-organic vapor phase epitaxy (MOVPE) have been characterized by photoreflectance (PR) spectroscopy. The intensity of PR signals from the InP emitter and InGaAs collector layers of the HBT wafers decreased with increasing emitter growth temperature and showed a linear positive correlation with the HBT current gain. On the other hand, the intensity of PR signals from the n-InP single layers scarcely changed with increasing InP growth temperature. The change in the PR intensity of the emitter and collector layers is expected to reflect the crystal quality of the adjacent InGaAs:C base layer, which determines the HBT current gain. Thus, the present PR method is eminently suitable for the nondestructive analysis of the current gain of InP/InGaAs HBT wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 257
Copyright
Copyright © Materials Research Society 2000

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