Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-04T21:21:16.249Z Has data issue: false hasContentIssue false
  • English
  • Français

Non-Contact Metrology for Electrical Characterization of Photo-Voltaic Materials

Published online by Cambridge University Press:  01 February 2011

Michael Ira Current ,
Vladimir Faifer ,
Tim Wong ,
Wojtek Walecki  and
Tan Nguyen
Michael Ira Current
Affiliation:
[email protected], Frontier Semiconductor, Front End Technology, 1631 N. 1st Street, San Jose, CA, 95112, United States, 408-452-8898, 408-452-8688
Vladimir Faifer
Affiliation:
[email protected], Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA, 95112, United States
Tim Wong
Affiliation:
[email protected], Frontier Semiconductor, 1631 N. 1st Street, San Jo se, CA, 95112, United States
Wojtek Walecki
Affiliation:
[email protected], Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA, 95112, United States
Tan Nguyen
Affiliation:
[email protected], Frontier Semiconductor, 1631 N. 1st Street, San Jose, CA, 95112, United States
Get access

Abstract

A non-contact metrology for electrical characterization of p-n junctions has been developed for use on photo-voltaic materials. By analysis of junction photo-voltage (JPV) measurements at multiple light beam modulation frequencies and multiple light penetration depths, a comprehensive electrical analysis of photo-voltaic materials is provided for junction sheet resistance, leakage current, capacitance and bulk carrier diffusion length. The JPV analysis can be made with screen and native oxides on the surface, so no pre-measurement chemical etching is required. Since the probe does not contact the p-n junction surface, measurements can be made in a continuous fashion with the junction moving under the probe, providing a method for efficient high-resolution mapping of local electrical properties. The non-contact probing also allows for non-damaging measurements in both “hard” (Si) and “soft” (organic) photo-voltaic materials. Examples of p-n junction properties in polished, crystalline-Si and cast poly-Si will be discussed.

Keywords

photovoltaicelectrical propertiesSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 945: Symposium FF – Materials and Basic Research Needs for Solar Energy Conversion , 2006 , 0945-FF06-10
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1 Faifer, V.N., Current, M.I., Walecki, W., Souchkov, V., Mikhaylov, G., Van, P., Wong, T.M.H., Nguyen, T., Lu, J., Lau, S.H., Koo, A., “Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions”, in Symposium C: Silicon Front-end Junction Formation- Physics and Technology, April 13-15, 2004. MRS Proc. 810 C11.9.Google Scholar
2 Faifer, V.N., Current, M.I., Wong, T.M.H., Souchkov, V.V., “Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions” J. Vac. Sci. Technol. B24(1) (2006) 414–420.Google Scholar
3 ASTM Standard F391-96. “Standard test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage” ASTM, 1996.Google Scholar