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Noncontact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface

Published online by Cambridge University Press:  26 February 2011

K. Katayama  and
F. Shimura
K. Katayama
Affiliation:
North Carolina State University, Dept. of Mat. Sci.& Eng., Raleigh, NC 27695–7916 USA
F. Shimura
Affiliation:
North Carolina State University, Dept. of Mat. Sci.& Eng., Raleigh, NC 27695–7916 USA
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Abstract

The effect of ultraviolet (UV) irradiation on the minority-carrier surface recombination lifetime (τs) in silicon wafers with native or thermal oxide was studied with a noncontact laser/microwave photoconductance (LM-PC) technique. The τs greatly increases in samples with native oxide after the irradiation. The dominant factor for the τs change can be negative charges created by photo-injected electrons in the surface area. On the other hand, the irradiation decreases τs in silicon with thermal oxide. The τs decrease is due to the generation of carrier recombination centers with an energy level around 0.2eV at the Si-SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1067
Copyright
Copyright © Materials Research Society 1992

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References

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