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Noncontact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface
Published online by Cambridge University Press: 26 February 2011
Abstract
The effect of ultraviolet (UV) irradiation on the minority-carrier surface recombination lifetime (τs) in silicon wafers with native or thermal oxide was studied with a noncontact laser/microwave photoconductance (LM-PC) technique. The τs greatly increases in samples with native oxide after the irradiation. The dominant factor for the τs change can be negative charges created by photo-injected electrons in the surface area. On the other hand, the irradiation decreases τs in silicon with thermal oxide. The τs decrease is due to the generation of carrier recombination centers with an energy level around 0.2eV at the Si-SiO2 interface.
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- Copyright © Materials Research Society 1992