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Nonconformal Al Via-Hole Filling by Electron Beam Evaporation

Published online by Cambridge University Press:  25 February 2011

C.-C. Cho
C.-C. Cho*
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265.
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Abstract

Using electron beam evaporation, we have deposited Al on patterned SiO2 films grown on various Si(100)-based substrates and characterized the Al films by scanning electron microscopy, x-ray diffraction and transmission electron microscopy. The growth mode of Al in the via holes of the SiO2 films is found to depend on the base materials of the holes. For via holes based on Si(100) and TiSi2, Al fills the holes nonconformally, showing little Al on the side walls. The nonconformal growth of Al is useful for submicron via-hole filling because it prevents void formation caused by shadowing effect. In contrast, for holes of AlCu bases, Al grows conformally. For the Al grown in the via holes of Si(100) bases, single crystal Al with Al(110)//Si(100) epitaxial relation can be grown in the holes at a substrate temperature of 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 691
Copyright
Copyright © Materials Research Society 1992

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References

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