Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:49:37.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Non Alloyed Ohmic Contacts for GaAs Coplanar Mixer Diodes

Published online by Cambridge University Press:  15 February 2011

John M. Woodcock
John M. Woodcock*
Affiliation:
Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
Get access

Abstract

A Q-switched ruby laser has been used to anneal gallium arsenide which has either been implanted with a donor or coated with a thin layer of material containing the donor. Silicon nitride (∼500Å), germanium (∼50Å), tin (∼50Å) and silicon (∼500Å) have been used and in all cases laser annealing produces n-type doping levels in excess of 1019cm−3. Non alloyed ohmic contacts have been made on these heavily doped layers with specific contact resistances as low as 1.4 × 10−6Ω cm2. These contacts have been used in the fabrication of fine geometry coplanar mixer diodes. Ideality factors of 1.1 have been measured from the d.c. current voltage characteristics and diodes with a total capacitance of O.03pF have series resistances below 10 ohms. Matched pairs of these devices have given a 4.8dB conversion loss at 35GHz in a fin line balanced mixer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 665
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Woodcock, J.M. and Butler, H., Radiation Effects, 47, 81 (1980).Google Scholar
2. Mozzi, R.L., Fabian, W. and Piekarski, R.J., Appl. Phys. Letts. 35, 337 (1979).CrossRefGoogle Scholar
3. Narayan, J., Young, R.T. and Wood, R.F., Appl. Phys. Letts. 33, 334 (1978).Google Scholar
4. Badertscher, G., Salathè, R.P. and Luthy, W., Electron. Letts. 16, 113 (1980).CrossRefGoogle Scholar
5. Davies, D.E., Ryan, T.G. and Lorenzo, J.P., Appl. Phys. Letts. 37, 443 (1980).Google Scholar
6. Nissim, Y.I., Gibbons, J.F., Magee, T.J. and Ormerod, R., J. Appl. Phys. 52, 227 (1981).CrossRefGoogle Scholar
7. Surridge, R.K., Summers, J.G. and Woodcock, J.M., Proceedings 11th European Microwave Conference 1981, p. 871.Google Scholar
8. Cullis, A.G., Webber, H.C. and Bailey, P., J. Phys. E 12, 688 (1979).CrossRefGoogle Scholar
9. Donnelly, J.P., Bozler, C.O. and Lindley, W.T., Solid St. Electron. 20, 273 (1977).Google Scholar
10. Hower, P.L., Hooper, W.W., Cairns, B.R., Fairman, R.D. and Tremere, D.A. in: Semiconductors and Semimetals Vol. 7, part A, Willardson, R.K. and Beer, A.C. eds. (Academic Press, New York and London 1971) p. 147.Google Scholar
11. Bates, R.N. and Coleman, M.D., Proc. 9thEuropean Microwave Conf. 1979, p. 721.Google Scholar