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Non Alloyed Ohmic Contacts for GaAs Coplanar Mixer Diodes
Published online by Cambridge University Press: 15 February 2011
Abstract
A Q-switched ruby laser has been used to anneal gallium arsenide which has either been implanted with a donor or coated with a thin layer of material containing the donor. Silicon nitride (∼500Å), germanium (∼50Å), tin (∼50Å) and silicon (∼500Å) have been used and in all cases laser annealing produces n-type doping levels in excess of 1019cm−3. Non alloyed ohmic contacts have been made on these heavily doped layers with specific contact resistances as low as 1.4 × 10−6Ω cm2. These contacts have been used in the fabrication of fine geometry coplanar mixer diodes. Ideality factors of 1.1 have been measured from the d.c. current voltage characteristics and diodes with a total capacitance of O.03pF have series resistances below 10 ohms. Matched pairs of these devices have given a 4.8dB conversion loss at 35GHz in a fin line balanced mixer.
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- Copyright © Materials Research Society 1982
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