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Noise properties of a single ZnO nanowire device

Published online by Cambridge University Press:  01 February 2011

Choi Soo Han ,
Dong Wook Kim ,
Do Young Jang ,
Hyun Jin Ji ,
Sang Woo Kim ,
So Jung Park ,
Seung Eon Moon  and
Gyu Tae Kim
Choi Soo Han
Affiliation:
[email protected], Korea Univeristy, School of Electrical Engineering, Anam-Dong, Seoul, N/A, Korea, Republic of
Dong Wook Kim
Affiliation:
[email protected], Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Do Young Jang
Affiliation:
[email protected], Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Hyun Jin Ji
Affiliation:
[email protected], Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
Sang Woo Kim
Affiliation:
[email protected], Kumoh National Institute of Technology, School of Advanced Materials and System Engineering, Gumi, N/A, Korea, Republic of
So Jung Park
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, Daejeon, N/A, Korea, Republic of
Seung Eon Moon
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, Daejeon, N/A, Korea, Republic of
Gyu Tae Kim
Affiliation:
[email protected], Korea University, School of Electrical Engineering, Seoul, N/A, Korea, Republic of
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Abstract

The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10−3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.

Keywords

nanostructureelectrical propertiessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O17-08
Copyright
Copyright © Materials Research Society 2008

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References

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