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Nmr and Esr Studies of the Structural Defects of Amorphous and Microcrystalline Sic Prepared by the Polymer Route

Published online by Cambridge University Press:  25 February 2011

S.-J. Ting ,
C.-J. Chu  and
J.D Mackenzie
S.-J. Ting
Affiliation:
Department of Material Science and Engineering, University of California, Los Angeles, CA 90024
C.-J. Chu
Affiliation:
Department of Material Science and Engineering, University of California, Los Angeles, CA 90024
J.D Mackenzie
Affiliation:
Department of Material Science and Engineering, University of California, Los Angeles, CA 90024
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Abstract

Amorphous SiC was prepared by firing the polycarbosilane to various temperatures ranging from 500°C to 1200°C. However the l3c CPMAS NMR and ESR studies show that the carbon rich SiC has two major structural defects, C=C bonds and C-dangling bonds. Both defects concentrations vary with different sample firing conditions. Hydrogen has dramatic effect on decreasing the defect concentrations when used in the sample firing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 529
Copyright
Copyright © Materials Research Society 1990

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References

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