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NMR and EPR Study of Sn0.98 Gd0. 02 Te at Low Temperatures.

Published online by Cambridge University Press:  26 February 2011

B. S. Han ,
O. G. Symko  and
D. J. Zheng
B. S. Han
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112 and F.T. Hedgcock, Department of Physics, McGill University, Montreal, PQ H3A2T8
O. G. Symko
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112 and F.T. Hedgcock, Department of Physics, McGill University, Montreal, PQ H3A2T8
D. J. Zheng
Affiliation:
Department of Physics, University of Utah, Salt Lake City, Utah 84112 and F.T. Hedgcock, Department of Physics, McGill University, Montreal, PQ H3A2T8
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Abstract

Magnetic resonance behavior of Sn0.98 Gd0. 02 Te has been investigated from 2.5 K down to 0.015 K using a SQUID magnetometer and a 3He-4He dilution refrigerator. Detection of magnetic resonance with a SQUID allows the detection of NMRan d EPR of some of the constituents of the sample. This method is particularly useful for broad lines. We have investigated the NMRfor 125Te, 119 Sn, and 117Sn, and the EPR for the Gd ion in a field of 265 Oe. The contribution of Gd impurities is maily important in the Knight shift of the Sn isotopes; this shift is 7%. The EPR shows 2 broad lines with structure; one line we attribute to the paramagnetic ions and the second one we attribute to Gd ions which have formed clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 125
Copyright
Copyright © Materials Research Society 1987

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References

(1) Cochrane, R.W., Hedgcock, F.T., and Lightstone, A.W., Can. J. Phys. 56, 68 (1978).Google Scholar
(2) Perrin, B. and Hedgcock, F.T., Can. J. Phys. 60, 1783 (1982).Google Scholar
(3) Perrin, B. and Hedgcock, F.T., J. Phys. C: Solid St. Phys. 15, 6037 (1982).Google Scholar
(4) Bartkowski, M., Northcott, D.J., Park, J.M., Reddoch, A.H., and Hedgcock, F.T., Solid St. Commun. 56, 659 (1985).Google Scholar
(5) Manoogian, A., Chan, B.W., Re, R.Brun del, Donofrio, T., and Woolley, J.C., J. Appl. Phys. 53, 8934 (1982).Google Scholar
(6) Hardiman, M., Pellisson, J., Barnes, S.E., Bisson, P.E., and Petter, M., Phys. Rev. B 22, 2175 (1980).Google Scholar
(7) Chamberlin, R. and Symko, O.G., J. Low Temp. Phys. 35, 337 (1979).Google Scholar
(8) Jaehne, E. and Symko, O.G., Solid St. Commun. 30, 31 (1979).Google Scholar
(9) Weast, R.C. Handbook of Chemistry and Physics 53 rd edition (CRC) 1972–1973 P. E-58.Google Scholar
(10) Kremer, R.E. and Furdyna, J.K., Phys. Rev. B31, 1 (1985).CrossRefGoogle Scholar
(11) Hedgcock, F.T., Sullivan, P.C., Grembowicz, J.T., and Bartkowski, M., to be published in Can. J. Phys.Google Scholar
(12) Han, B.S., Symko, O.G., Zheng, D.J. and Hedgcock, F.T., to be published.Google Scholar