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Nmos Transistors Fabricated by Simultaneous Laser-Assisted Crystallization and Diffusion on Silicon on Electro-Optic PLZT

Published online by Cambridge University Press:  26 February 2011

J. H. Wang ,
T. H. Lin ,
S. C. Esener ,
S. Dasgupta  and
S. H. Lee
J. H. Wang
Affiliation:
Dept. of Elec. & Comp. Eng., University of California, San Diego, La Jolla, CA 92093
T. H. Lin
Affiliation:
Dept. of Elec. & Comp. Eng., University of California, San Diego, La Jolla, CA 92093
S. C. Esener
Affiliation:
Dept. of Elec. & Comp. Eng., University of California, San Diego, La Jolla, CA 92093
S. Dasgupta
Affiliation:
Dept. of Elec. & Comp. Eng., University of California, San Diego, La Jolla, CA 92093
S. H. Lee
Affiliation:
Dept. of Elec. & Comp. Eng., University of California, San Diego, La Jolla, CA 92093
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Abstract

Simultaneous CW laser assisted crystallization and diffusion for fabricating NMOS transistors on Si/SiO2/PLZT is presented. Hall effect measurement (mobility 74cm2V−1sec×1019cm−3 of phosphorus dopping), crystal delineation (grain size 50×30μm) and Raman spectroscopy (stress 6.0×109dynescm−2) indicated that good quality doped silicon crystal film can be produced with this method. NMOS transistors fabricated by this technology show good performances such as high breakdown voltage (45 V), small leakage current (2 nA/μm), reasonable channel carrier mobility (140cm2V−1−1) and photosensitivity (1.5 A/W).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 675
Copyright
Copyright © Materials Research Society 1988

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References

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