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Nmos Logic Circuits in Laser-Crystallized Silicon on Quartz

Published online by Cambridge University Press:  22 February 2011

A. Chiang ,
M. H. Zarzycki ,
W. P. Meuli  and
N. M. Johnson
A. Chiang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
M. H. Zarzycki
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
W. P. Meuli
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Depletion mode as well as enhancement mode n-channel thin-film transistors (TFT's) have been fabricated in CO2 laser-crystallized silicon on fused quartz. Nearly defect-free islands were obtained by using an offset circular beam to form a tilted melt interface. The optimization of subsequent processing steps to achieve simultaneously low leakage currents and voltage thresholds appropriate for depletion-load NMOS circuits involved adjustments of ion implantation and high temperature cycles with the aid of simulation. The resultant high performance silicon-gate TFT's have led to NMOS ring oscillators with 2.5 ns delay/stage and dynamic shift registers with MHz clock rates. These are the first logic circuits fabricated in beam-crystallized silicon on bulk amorphous substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 551
Copyright
Copyright © Materials Research Society 1984

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References

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