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Nitrogen Influence on the Photoluminescence Properties of Silicon Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Luigi Ferraioli ,
Pierluigi Bellutti ,
Nicola Daldosso ,
Viviana Mulloni  and
Lorenzo Pavesi
Luigi Ferraioli
Affiliation:
[email protected], Università di Trento, Physics, via Sommarive 14, I-38050, Povo (Trento), Trento, 38050, Italy, +39 0461 882070, +39 0461 881696
Pierluigi Bellutti
Affiliation:
[email protected], ITC-irst, Via Sommarive 18, Trento, I-38050, Italy
Nicola Daldosso
Affiliation:
[email protected], Università di Trento, Dipartimento di Fisica, Via Sommarive 14, Trento, I-38050, Italy
Viviana Mulloni
Affiliation:
[email protected], ITC-irst, Via Sommarive 18, Trento, I-38050, Italy
Lorenzo Pavesi
Affiliation:
[email protected], Università di Trento, Dipartimento di Fisica, Via Sommarive 14, Trento, I-38050, Italy
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Abstract

We have performed photoluminescence analysis of silicon rich oxide (SRO) and silicon rich oxynitride (SRON) samples deposited by plasma enhanced chemical vapor deposition (PECVD) and thermally annealed to cause the formation of silicon nanocrystals (Si-nc). Our purpose was to investigate the influence of nitrogen embedded into the oxide matrix on the photoluminescence properties of Si-nc. We found a large incorporation of silicon and a decrease of its diffusivity when the oxide is nitrogen rich. As a consequence the rate of crystallization for Si aggregates is slowed down when nitrogen is present in the oxide matrix.

Keywords

luminescenceSinanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L07-10
Copyright
Copyright © Materials Research Society 2007

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References

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