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Nitrogen Incorporation in a-Si,N:H Alloy Films Produced by Remote PECVD

Published online by Cambridge University Press:  21 February 2011

G. N. Parsons  and
G. Lucovsky
G. N. Parsons
Affiliation:
Department of Physics, N.C. State University, Raleigh, N.C. 27695–8202
G. Lucovsky
Affiliation:
Department of Physics, N.C. State University, Raleigh, N.C. 27695–8202
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Abstract

We have produced a-Si,N:H alloy films using remote PECVD at a substrate temperature of 200°C with Si/N ratios between 0 (a-Si:H) and 3/4 (Si3N4). Films were prepared using nitrogen or ammonia source-gases, introduced downstream from a helium rf plasma. Nitrogen and hydrogen bonding environments were investigated using infrared absorbance. For films produced from N2, [N] and [H] concentrations were determined by SIMS. A random bonding model is used for a quantitative analysis of Si-H and Si-N bonding distributions, and to estimate the N/Si ratio in films produced from NH3. A comparison of N2 and NH3 source gases for nitrogen incorporation is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 85
Copyright
Copyright © Materials Research Society 1990

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References

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