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Nitrogen Implantation Effects on the Chemical Bonding and Hardness of Boron and Boron Nitride Coatings

Published online by Cambridge University Press:  10 February 2011

Alan Jankowski
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550
Thomas Felter
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550
Robert Patterson
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550
Jeffrey Hayes
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550
Simone Anders
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
Thomas Stamler
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
David Poker
Affiliation:
Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN 37831
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Abstract

Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N2) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B ls photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N+ and N2+) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B ls NEXAFS spectra.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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