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Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

Published online by Cambridge University Press:  23 March 2015

Samuel L. Moore
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), 310 Campbell Hall, 1300 University Boulevard, AL 35294-1170, U.S.A.
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), 310 Campbell Hall, 1300 University Boulevard, AL 35294-1170, U.S.A.
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Abstract

Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Yan, Chih-shiue, et al. . ‘Very High Growth Rate Chemical Vapor Deposition of Single-Crystal Diamond’, Proceedings of the National Academy of Sciences, 99 (2002), 12523–25.CrossRefGoogle ScholarPubMed
Tallaire, A., et al. . ‘High Quality Thick CVD Diamond Films Homoepitaxially Grown on (111)-Oriented Substrates’, Diamond and Related Materials, 41 (2014), 3440.CrossRefGoogle Scholar
Michl, J., et al. . ‘Perfect Alignment and Preferential Orientation of Nitrogen-Vacancy Centers During Chemical Vapor Deposition Diamond Growth on (111) Surfaces’, Applied Physics Letters, 104 (2014).CrossRefGoogle Scholar
McCauley, T. G.. ‘Synthesis and Characterization of Metastable Phases of Carbon’ (University of Alabama at Birmingham, 1996).Google Scholar
Breeding, Christopher M., et al. . ‘The "Type" Classification System of Diamonds and Its Importance in Gemology’, Gems & Gemology, 45 (2009), 96111.CrossRefGoogle Scholar
Doherty, M. W., et al. . ‘The Nitrogen-Vacancy Color Centre in Diamond’, Physics Reports, 528 (2013), 145.CrossRefGoogle Scholar
Hong, Sungkun, et al. . ‘Nanoscale Magnetometry with NV Centers in Diamond’, MRS Bulletin, 38 (2013), 155–61.CrossRefGoogle Scholar