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Ni Silicide Morphology On Small Features

Published online by Cambridge University Press:  17 March 2011

Oxana Chamirian ,
Anne Lauwers ,
Jorge A. Kittl ,
Mark Van Dal ,
Muriel De Potter ,
Christa Vrancken ,
Richard Lindsay  and
Karen Maex
Oxana Chamirian
Affiliation:
E.E. Department, K.U.-Leuven
Anne Lauwers
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Jorge A. Kittl
Affiliation:
Affiliate researcher at IMEC from Texas Instruments
Mark Van Dal
Affiliation:
Philips Research Leuven
Muriel De Potter
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Christa Vrancken
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Richard Lindsay
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Karen Maex
Affiliation:
E.E. Department, K.U.-Leuven
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Abctract

Silicidation of small features of various geometries and sizes using Ni-silicide was studied. Effects of dopants, surface preparation and silicidation parameters on silicide morphology were investigated. It was found that Ni silicide thickness and quality of the silicide/silicon interface (presence of NiSi2 pyramids) are dependent on the area dimensions and geometry. NiSi formed on narrow lines is thicker compared to wide areas. We found that pyramids of epitaxial NiSi2 protruding into the Si substrate are formed during the silicidation of undoped, boron-doped and BF2-doped active areas. The presence of pyramids was not observed on As-doped silicon. Rough interface due to the pyramids could be the reason for a more pronounced linewidth dependence of leakage current in the case of p+/n diodes. A higher density of pyramids was found on narrow lines (below 0.2μm) and particularly islands structures. No pyramids were found when a Ge preamorphisation implant was used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Murarka, S.P., J.Vac.Technol. 17 (1980) 775–792.Google Scholar
2. Lauwers, A., Steegen, A., Potter, M. de, Lindsay, R., Satta, A., Bender, H., and Maex, K., J.Vac.Technol. B 19 (2001) 2026–2037.Google Scholar
3. Morimoto, T. et al. , IEEE Trans. on Elecron Dev. 42 (1995) 915–922.Google Scholar
4. Deng, F., Johnson, R.A., Asbeck, P.M., and Lay, S.S., J. Appl. Phys. 81 (1997) 8047–8051.Google Scholar
5. Teodorescu, V., Nistor, I., Bender, H., Steegen, A., Lauwers, A., Maex, K., Landuyt, J. Van, J.Appl.Phys. 90 (2001) 167.Google Scholar
6. Chen, W.J. and Chen, L.J., J. Appl. Phys. 70 (1991) 2628.Google Scholar
7. Lu, S.W., Nieh, C.W., and Chen, L.J., Appl. Phys. Lett. 49 (1986) 1770.Google Scholar
8. Vantomme, A., Degroote, S., Decoster, J., Langouche, G., Pretorius, R., Appl. Phys. Lett. (1999) 3137.Google Scholar
9. Pawlak, B.J., Lindsay, R., Surdeanu, R., Stolk, P., Maex, K., Pages, X., 14th international Conference on Ion Implantation, New Mexico, USA, Sept. 2002 p.21.Google Scholar