Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Christiansen, S.
Albrecht, M.
Dorsch, W.
Strunk, H. P.
Zanotti-Fregonara, C.
Salviati, G.
Pelzmann, A.
Mayer, M.
Kamp, Markus
and
Ebeling, KJ
1996.
Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 1,
Issue. ,
Pelzmann, A.
Mayer, M.
Kirchner, C.
Sowada, D.
Rotter, T.
Kamp, Markus
Ebeling, K. J.
Christiansen, S.
Albrecht, M.
Strunk, H. P.
Holländer, B.
and
Mantl, S.
1996.
Determination of the dislocation densities in GaN on c-oriented sapphire.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 1,
Issue. ,
Teisseyre, H.
Nowak, G.
Leszczynski, M.
Grzegory, I.
Bockowski, M.
Krukowski, S.
Porowski, S.
Mayer, M.
Pelzmann, A.
Kamp, Markus
Ebeling, K. J.
and
Karczewski, G.
1996.
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 1,
Issue. ,
Shen, X. Q.
Tanaka, S.
Iwai, S.
and
Aoyagi, Y.
1997.
Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe.
MRS Proceedings,
Vol. 482,
Issue. ,
Holländer, B.
Mantl, S.
Mayer, M.
Kirchner, C.
Pelzmann, A.
Kamp, M.
Christiansen, S.
Albrecht, M.
and
Strunk, H. P.
1998.
Ion Scattering Studies of Defects In Gan Thin Films on C-Oriented Sapphire.
MRS Proceedings,
Vol. 512,
Issue. ,
Karpov, S.Yu
Makarov, Yu.N
Ramm, M.S
and
Talalaev, R.A
1998.
Analysis of gallium nitride growth by gas-source molecular beam epitaxy.
Journal of Crystal Growth,
Vol. 187,
Issue. 3-4,
p.
397.
Salviati, G.
Albrecht, M.
Zanotti-Fregonara, C.
Armani, N.
Mayer, M.
Shreter, Y.
Guzzi, M.
Melnik, Yu. V.
Vassilevski, K.
Dmitriev, V. A.
and
Strunk, H. P.
1999.
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN.
physica status solidi (a),
Vol. 171,
Issue. 1,
p.
325.
Kirchner, V
Ebel, R
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
and
Ryder, P.L
1999.
Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers.
Materials Science and Engineering: B,
Vol. 59,
Issue. 1-3,
p.
47.
Moustakas, T.D.
1999.
Gallium Nitride (GaN) II.
Vol. 57,
Issue. ,
p.
33.
Gupta, V. K.
Averett, K. L.
Koch, M. W.
McIntyre, B. L.
and
Wicks, G. W.
2000.
Selective area growth of GaN using gas source molecular beam epitaxy.
Journal of Electronic Materials,
Vol. 29,
Issue. 3,
p.
322.
Hsu, Yu Jen
Hong, Lu Sheng
Huang, Kau Fong
and
Tsay, Jing En
2002.
Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source.
Thin Solid Films,
Vol. 419,
Issue. 1-2,
p.
33.
Hsu, Yu Jen
Hong, Lu Sheng
and
Jiang, Jyh-Chiang
2006.
Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth.
Thin Solid Films,
Vol. 498,
Issue. 1-2,
p.
100.