Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:36:26.846Z Has data issue: false hasContentIssue false
  • English
  • Français

A next generation TCO Material for display systems: Molybdenum doped Indium oxide thin films

Published online by Cambridge University Press:  01 February 2011

E. Elangovan ,
A Marques ,
R Martins  and
E Fortunato
E. Elangovan
Affiliation:
[email protected], New University of Lisbon, Materials Research Center, CENIMAT/FCT/UNL, Campus de Caparica, Monte de Caparica, Setubal, 2829-516, Portugal, 00351 212948562; Extn. 11609, 00351 212948558
A Marques
Affiliation:
[email protected], New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
R Martins
Affiliation:
[email protected], New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
E Fortunato
Affiliation:
[email protected], New University of Lisbon, Materials Science Department, CENIMAT/FCT/UNL, Campus de Caparica, Caparica, 2829-516, Portugal
Get access

Abstract

Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

Keywords

transparent conductorsputteringx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 936: Symposium L – Materials for Next-Generation Display Systems , 2006 , 0936-L01-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Crawford, G. P, Flexible Flat Panel Displays, 1st ed. (John Wiley & Sons Ltd., England, 2005) chapter 1; (a) chapter 5.Google Scholar
2 Görrn, P., Saner, M., Meyer, J., Kr, M.öger, Becker, E., Johannes, H., Kowalsky, W., and Riedl, T., Adv. Mater. 18, 738 (2006).Google Scholar
3 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature 432, 488 (2004).Google Scholar
4 Meng, Y., Yang, X., Chen, H., Shen, J., Jiang, Y., Zhang, Z., and Hua, Z., Thin Solid Films 394, 219 (2001).Google Scholar
5 Huang, L., Li, X., Zhang, Q., Miao, W., Zhang, L., Yan, X., Zhang, Z., and Hua, Z., J. Vac. Sci. Technol. A 23, 1350 (2005).Google Scholar
6 Elangovan, E., Marques, A., Pimental, A., Martins, R., and Fortunato, E., Mater. Res. Soc. Symp. Proc., 905E, 0905–DD05 (2006).Google Scholar
7 Pankove, J.I, Optical Processes in Semiconductors, Prentice-Hall; NJ; pp. 34 (1971).Google Scholar
8 Sun, S.Y, Huang, J.L, and Lii, D.F, J. Vac. Sci. Technol. A 22, 1235 (2004); A.E. Delahoy, S.Y. Guo, C. Padurau, and A. Belkind, ibid., 22, 1697 (2004).Google Scholar