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New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors

Published online by Cambridge University Press:  11 February 2011

M.A.L. Johnson ,
J.P. Long  and
J. F. Schetzina
M.A.L. Johnson
Affiliation:
Department of Material Science and Engineering, NC State University Raleigh, NC 27695–7907
J.P. Long
Affiliation:
Department of Physics, NC State University
J. F. Schetzina
Affiliation:
Department of Electrical and Computer Engineering, NC State University
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Abstract

New ultraviolet (UV) light emitting device structures address the problems of small carrier concentrations and large band-offsets in wide bandgap Aluminum Gallium Nitride (AlGaN) heterostructures through the use of graded epilayers for electron and hole injection. For light emission at 280–290 nm, a multiple-quantum-well separate confinement heterostructure (MQWSCH) employs a graded AlGaN structure for the injection of majority carriers from the metal-semiconductor contact layers into the spacecharge region of the pn-junction with a higher bandgap energy. Sample LED mesa devices were fabricated and have shown light emission of 289 nm under a forward bias of 12V (20mA). These results provide a ‘proof-of-concept’ for this new graded device structure which can be employed for the development of both UV-LEDs and laser diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.4
Copyright
Copyright © Materials Research Society 2003

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References

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