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New Theoretical Treatment of Electroreflectance from Surfaces and Interfaces Having Large Built-in Fields

Published online by Cambridge University Press:  21 February 2011

J. W. Garland ,
Z. Zhang ,
C. Kim ,
D. Yang  and
P. M. Raccah
J. W. Garland
Affiliation:
Physics Department, University of Illinois at Chicago, Chicago, IL 60607
Z. Zhang
Affiliation:
Physics Department, University of Illinois at Chicago, Chicago, IL 60607
C. Kim
Affiliation:
Physics Department, University of Illinois at Chicago, Chicago, IL 60607
D. Yang
Affiliation:
Physics Department, University of Illinois at Chicago, Chicago, IL 60607
P. M. Raccah
Affiliation:
deceased
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Abstract

We have constructed a completely quantum-mechanical theoretical treatment of the modification of the local dielectric function by intense electric fields. It includes the numerical calculation of depletion-region bound-state energies and wavefunctions as well as band wavefunctions. We use this treatment to construct electroreflectance (ER) lineshapes. Our numerical results differ significantly from those of previously proposed ER lineshapes for GaAs with Nd >> 1016. They yield excellent fits to ER data and allow the accurate determination of doping levels and band bendings from ER data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 39
Copyright
Copyright © Materials Research Society 1992

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References

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