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New Results of nc-Si:H Films Prepared by Hydrogen-Diluted Silane in a Triode Pecvd System

Published online by Cambridge University Press:  10 February 2011

Hua Qin ,
Kunji Chen ,
Xinfan Huang ,
Wei Li ,
Kazuyuki Ikuta ,
Akihisa Matsuda  and
Kazunobu Tanaka
Hua Qin
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Kunji Chen
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Wei Li
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Kazuyuki Ikuta
Affiliation:
National Institute for Advanced Interdisciplinary Research Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-Shi, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-Shi, Ibaraki 305, Japan
Kazunobu Tanaka
Affiliation:
National Institute for Advanced Interdisciplinary Research
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Abstract

We report new results on microstructures and electronic properties of nanocrystalline silicon (nc-Si:H) films prepared by a triode PECVD method with a hydrogen diluted silane plasma. The transition from a-Si:H to nc-Si:H was obtained by varying the ratio of H2 to SiH4 while the bias of the grid electrode was fixed at 100.V with respect to the substrate. The threshold value of [H2]/[H2 ]+[SiH4] is about 93.3%. With increasing value of [H2]/[H2]+[SiH4], the volume fraction of crystallinity in nc-Si:H films increased from 12% to 50%, while the average grain size remaind constant. This is quite different from the structures of samples prepared by the conventional diode PECVD with H2 dilution. The traveling-wave technique was applied to study the transport properties of nc-Si:H films, and experimental results confirmed percolation transport in nc-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 301
Copyright
Copyright © Materials Research Society 1996

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References

1. Furukawa, S. and Miyasato, T., Phys. Rev. B, 38, 5726 (1988).Google Scholar
2. Takagi, H., Ogawa, H., Yamazabi, Y., Ishizaki, A. and Nakagiri, T., Appl. Phys. Lett., 56, 2379 (1990).Google Scholar
3. Chen, K.J., Huang, X.F., Xu, J. and Feng, D., Appl. Phys. Lett., 61, 2069 (1992).Google Scholar
4. Ye, Q.Y., Tsu, R. and Nicollian, E.H., Phys. Rev. B, 44, 1806 (1991).Google Scholar
5. Veprek, S., Chem, J., Phys., 57, 952 (1972).Google Scholar
6. Matsuda, A., J. Non-Cryst. Solids, 59/60,767 (1972).Google Scholar
7. Tsai, C.C., in Amorphous Silicon and Related Materials, Vol.1, ed. Fritzsche, H. (World Scientific, Singapore, 1989), p. 123.Google Scholar
8. Shimizu, I., Hanna, J. and Shirai, H. (Mat. Res. Soc. Symp. Proc. 164, 1990) pp. 195.Google Scholar
9. Fritzsche, H. and Chen, K.J., Phys. Rev. B, 28, 4900 (1983).Google Scholar
10. Nakagawa, Kiyokazn, Katayama, Yoshifumi, Shimada, Toshikazu., Matsubaka, Hirokazu, Ishizaka, Akitoshi, Shiraki, Yasuhiro and Maruyama, Eiichi, J. Non- Cryst. Solids, 59/60, 799 (1983).Google Scholar
11. G.X, Chen, Xia, H., Chen, K.J., Zhang, W. and Zhang, X.K., Phys. Status Solidi A, 118, KS1 (1990).Google Scholar
12. Tsu, R., Gonzalez-Hernandez, J., Chao, S.S., Lee, S.C. and Tanaka, K., Appl. Phys. Lett., 40, 534 (1982).Google Scholar