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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

Published online by Cambridge University Press:  11 February 2011

François Templier ,
Nicolas Daval ,
Léa Di Cioccio ,
Daniel Bourgeat ,
Fabrice Letertre ,
Dominique Planson ,
Jean-Pierre Chante  and
Thierry Billon
François Templier
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble, France
Nicolas Daval
Affiliation:
SOITEC Silicon On Insulator Technologies, Parc Technologique des Fontaines, 38190 Bernin, France.
Léa Di Cioccio
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble, France
Daniel Bourgeat
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble, France
Fabrice Letertre
Affiliation:
SOITEC Silicon On Insulator Technologies, Parc Technologique des Fontaines, 38190 Bernin, France.
Dominique Planson
Affiliation:
CEGELY, INSA de Lyon, Bat. Léonard de Vinci, 20 avenue Albert Einstein, 69621 Villeurbanne, France.
Jean-Pierre Chante
Affiliation:
SOITEC Silicon On Insulator Technologies, Parc Technologique des Fontaines, 38190 Bernin, France.
Thierry Billon
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble, France
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Abstract

Feasibility of 4H-SiC epitaxy on SiCOI substrates has been demonstrated, with high quality of obtained layers. Power Schottky diodes were designed and fabricated on these new structures, and exhibited very interesting electrical performance, particularly in reverse mode, with Vbr ∼ 1000 V. This technology is very promising for the realization of monolithic SiC power systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K7.9
Copyright
Copyright © Materials Research Society 2003

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References

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