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A New Practical Approach to Implement a Transient Enhanced Diffusion Model into an Fem-Based 2-D Process Simulator

Published online by Cambridge University Press:  10 February 2011

Noriyuki Sugiyasu ,
Kaina Suzuki ,
Syuichi Kojima  and
Yasushi Ohyama
Noriyuki Sugiyasu
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, [email protected]
Kaina Suzuki
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, [email protected]
Syuichi Kojima
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, [email protected]
Yasushi Ohyama
Affiliation:
Hiroshi Goto Technology Development Division, Fujitsu Limited., Company mail no. c-832 4–1–1 Kamikodanaka, Nakahara-ku, Kawasaki, 211–88, Japan, [email protected]
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Abstract

We have proposed a coupled and de-coupled combined method to solve partial differential equations for a transient enhanced diffusion model. In the case of a boron diffusion process, the sum of concentrations of interstitial Si and of impurity-interstitial pair, the sum of concentrations of vacancy and of impurity-vacancy pair and each chemical impurity concentration are kept constant. The charge neutrality law is also applied. This procedure has realized a robust solution system which is implemented into our in-house FEM-based 2-D process simulator, and transient enhanced diffusion simulations for a sub-quarter micron nMOSFET have been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 15
Copyright
Copyright © Materials Research Society 1998

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References

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