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New Organometallic Selenium Reagents for Low Temperature Omcvd of Znse

Published online by Cambridge University Press:  22 February 2011

M. Danek ,
J-S. Huh ,
K. F. Jensen ,
C. Gordon  and
W. P. Kosar
M. Danek
Affiliation:
Massachusetts Institute of Technology Cambridge, Massachusetts 02139 Departments of Chemistry Cambridge, Massachusetts 02139
J-S. Huh
Affiliation:
Massachusetts Institute of Technology Cambridge, Massachusetts 02139 Materials Science Cambridge, Massachusetts 02139
K. F. Jensen
Affiliation:
Massachusetts Institute of Technology Cambridge, Massachusetts 02139 Chemical Engineering, Cambridge, Massachusetts 02139
C. Gordon
Affiliation:
Advanced Technology Materials, Danbury, Connecticut 06810
W. P. Kosar
Affiliation:
Advanced Technology Materials, Danbury, Connecticut 06810
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Abstract

ZnSe epitaxial films have been grown on (100) GaAs by reduced pressure organometallic chemical vapor deposition (OMCVD) from tertiary-butyl(allyl)selenium (tBASe) and dimethylzinc triethylamine adduct (DMZnNEt3) at temperatures of 325-450ΰC. Good surface morphology, film crystallinity and interface quality have been found with scanning electron microscopy (SEM), double crystal X-ray diffraction (DCD) and Rutherford back scattering spectroscopy (RBS). Secondary ion mass spectrometry (SIMS) shows negligible carbon concentration (below 5x1017atoms/cm3). Low temperature photoluminescence (PL) exhibits a strong near band-edge emission with a dominant donor-bound peak. Gas-phase pyrolysis of tBASe has been probed at reduced pressure in a molecular beam mass spectrometric system in hydrogen and deuterium carrier gases. The precursor decomposes above 200ΰC by β-hydrogen elimination and by homolysis of the Se-C bonds. High isobutene vs. isobutane ratios (50-100) indicate a predominance of β-hydrogen elimination over homolysis at temperatures below 400ΰC. Diallylselenium is present in the gasphase in low concentrations at temperatures of 200-350ΰC. Diallylselenium, methylallylselenium and dimethyl-selenium have been observed as minor by-products during pyrolysis of co-dosed tBASe and DMZnNEt3. The effect of the retro-ene decomposition pathway of allylselenium reagents on carbon incorporation into ZnSe films is further probed by growth experiments with in situ generated 2-methylpropaneselenal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 231
Copyright
Copyright © Materials Research Society 1994

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