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New Optical Transition at Thermal Donors in Silicon

Published online by Cambridge University Press:  28 February 2011

J. Weber  and
H. J. Queisser
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 1, Federal Republic of Germany
H. J. Queisser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 1, Federal Republic of Germany
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Abstract

We detect new luminescence lines in Czochralski-grown silicon after prolonged heat treatments at 450°C. The properties of the new optical transition are well explained by a thermal donor-free hole recombination. From the IR-absorption spectra measured on the same samples, we have evidence for an inhomogeneous distribution of the thermal donors. The spatial fluctuations of the thermal donors appear to be necessary for the new luminescence spectrum to emerge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 147
Copyright
Copyright © Materials Research Society 1986

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References

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