Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T09:48:43.419Z Has data issue: false hasContentIssue false
  • English
  • Français

New Nanocrystalline si Floating Gate Structue for Nonvolatile Memory Application

Published online by Cambridge University Press:  11 February 2011

L.C. Wu ,
J.J. Shi ,
K.J. Chen ,
J. Xu ,
W. Li ,
Z.Y. Ma ,
M. Dai ,
D. Wu ,
A.D. Li  and
X.F. Huang
L.C. Wu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
J.J. Shi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
K.J. Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
J. Xu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
W. Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
Z.Y. Ma
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
M. Dai
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
D. Wu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
A.D. Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
X.F. Huang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, CHINA
Get access

Abstract

We report a direct experiment evidence for holes and electrons charging in a new nanocrystalline Si (nc-Si) floating gate structure (SiO2/nc-Si/SiO2/c-Si) fabricated in-situ by plasma oxidation and layer by layer deposition technique in a plasma enhanced chemical vapor deposition (PECVD) system. In this nc-Si floating gate structures, the thickness of tunneling SiO2 layer is about 2 nm and the mean grain size of nc-Si is 6 nm obtained from Raman scattering and AFM measurements. The discrete quantum level and Coulomb charging energy for a single electron have been observed in large ensemble of nc-Si dots by frequency dependent capacitance spectroscopy, which demonstrates that the Coulomb blockade for electron in nc-Si dots is larger than size fluctuation effects on the quantum confinement for our nc-Si floating gate structure. Quantitatively, the experiment results of capacitance spectroscopy are in good agreement with the theoretical calculations. By contrasted with silicon single electron transistor memory made by using ultra fancy nanotechnology, nc-Si based memory can be fabricated with a minimum perturbation of conventional silicon technology and may be closest to industrial application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.25
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996)Google Scholar
2. Geerligs, L. J., Anderegg, V. F., Holweg, P. A. M., Mooil, J. E., Pothier, H., Estere, D., Urbina, C., and Devoret, M. H., Phys. Rev. Lett. 64, 2691 (1990)Google Scholar
3. Tiwari, S., Rana, F., Chan, K., Shi, L., and Hanafi, H., Appl. Phys. Lett. 69, 1232 (1996)Google Scholar
4. Qin, H., Gu, X., Lu, H., Liu, J., Huang, X., and Chen, K., Solid State Commun. 111, 171 (1999)Google Scholar
5. Guo, L., Leobandung, E., and Choa, S. Y., Science 275, 649 (1997)Google Scholar
6. Saitoh, M., Saito, T., Inukai, T., and Hiramoto, T., Appl. Phys. Lett. 79, 2025 (2001)Google Scholar
7. Chen, M. R., and Chen, K. J., ACTA PHYSICA SINICA 3, 250 (1994)Google Scholar
8. Simmons, J. G., J. Appl. Phys. 34, 1793 (1963)Google Scholar
9. Dons, E. M., Skowronski, C. S., and Farmer, K. R., Appl. Phys. Lett. 73, 3712 (1998)Google Scholar
10. Ishikawa, Y., Kosugi, M., Kumezawa, M., Tsuchiya, T., and Tabe, M., Thin Solid Films 369, 69 (2000)Google Scholar
11. Ashoori, R. C., Stormer, H. L., Weiner, J. S., Pfeiffer, L. N., Baldwin, K. W., and West, K. W., Phys. Rev. Lett. 71, 613 (1993)Google Scholar