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A New Model of Tail Diffusion of Phosphorus and Boron in Silicon

Published online by Cambridge University Press:  26 February 2011

Frederick F. Morehead  and
R. F. Lever
Frederick F. Morehead
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
R. F. Lever
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
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Abstract

It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating “tails” in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects tioron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 49
Copyright
Copyright © Materials Research Society 1986

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References

1. Yoshida, M., Arai, E., Nakamura, H. and Terunuma, y., J.Appl.Phys. 45,1498(1974).Google Scholar
2. Matsumoto, S., Yoshida, M. and Niimi, T., Jpn.J.Appl.Phys. 13,1899 (1974).Google Scholar
3. Fair, R.B. and Tsai, J.C.C., J.Electrochem.Soc. 124,1107(1977).CrossRefGoogle Scholar
4. Hu, S.M., Fahey, P. and Dutton, R.W., J.Appl.Phys. 54,6912(1983).CrossRefGoogle Scholar
5. Matano, C., Jpn.J.Phys. 8,109(1933).Google Scholar
6. Makris, J.S. and Masters, B.J., J.Electrochem.Soc. 120,1252(1973).Google Scholar
7. Matsumoto, S., Ishikawa, Y., Shirai, Y., Sekine, S. and Niimi, T., Jpn.J.Appl.Phys. 19,217(1980).Google Scholar
8. Lever, R.F., Garben, B., Hsieh, C.M. and Arrienzo, W.A. Orr, in Impurity Diffusion and Gettering in Silicon, edited by Fair, R.B., Pearce, C.W. and Washburn, J.,(Materials Research Society, Pittsburgh 1985), 36, p. 95.Google Scholar
9. Gaiseanu, F., Extended Abstracts, (Electrochem.Soc., Pennington 1984), Vol 84–2, P. 715.Google Scholar
10. Hoand, C.P. Hansen, S.E., Tech.Rep.No. SEL83-001, DARPA Contract No. MDA 903-79-C-0257, July 1983.Google Scholar
11. Mathiot, D. and Pfister, J.C., J.Appl.Phys. 55,3518(1984).CrossRefGoogle Scholar
12. Yoshida, M., Jpn.J.Appl.Phys. 18,479(1979).CrossRefGoogle Scholar
13. Harris, R.M. and Antoniadis, A., Appl.Phys.Lett. 43,937(1983); R.Fahey, R.W. Outton and S.M. Hu, Appl.Phys.Lett. 44,777(1984).Google Scholar
14. Morehead, F.F. and Lever, R.F., Appl.Phys.Lett., in press.Google Scholar
15. Gösele, U., Morehead, F.F., Frank, W. and Seeger, A., Appl.Phys.Lett. 38, 157 (1983).CrossRefGoogle Scholar
16. Fairfield, J.M. and Masters, B.J., J.Appl.Phys. 38,3148(1967).Google Scholar
17. Tan, T.Y., Morehead, F.F. and Gösele, U., in Defects in Silicon, edited by Kimerling, L.C. and Bullis, W.M.,(Electrochem Soc., Pennington 1983),p. 325.Google Scholar
18. Hu, S.M., J.Vac.Sci.Technol. 14,17(1977).CrossRefGoogle Scholar
19. Matsumoto, S. and Ishikawa, Y., J.Appl.Phys. 54,5049(1983).CrossRefGoogle Scholar
20. Antoniadis, D.A. and Moskowitz, l., J.Appl.Phys. 53,6788(1982).Google Scholar
21. Tan, T.Y., Gösele, U. and Morehead, F.F., Appl.Phys. A 31,97(1983).Google Scholar
22. Fahey, P., Garbuscia, G., Mosiehi, M and Dutton, R.W., Appl.Phys.Lett. 46, 784(1985).CrossRefGoogle Scholar
23. Arienzo, W.A. Orr (private communication).Google Scholar
24. An example of an alternative to assumption (2) is the following. Both I's and V's contribute to the tail. There is no I-V equilibrium and both supersaturate because of a barrier to I-V reaction. C1 and Cv both have their equilibrium value for. is that value for which any excess I's or V's are consumed in the formation of PV, PV−, PV+,PI,Pl− and PI+ The system is buffered against defect super-saturation. For the data in Fig. 4 a reasonable fit obtains for cm−3where at the surface CPO = 4.5×1020 cm-3.Google Scholar