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A New Model of Tail Diffusion of Phosphorus and Boron in Silicon

Published online by Cambridge University Press:  26 February 2011

Frederick F. Morehead  and
R. F. Lever
Frederick F. Morehead
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
R. F. Lever
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
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Abstract

It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating “tails” in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects tioron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 49
Copyright
Copyright © Materials Research Society 1986

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