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A New Model for the Poly-Silicon thin Film Transistor for Use with Spice

Published online by Cambridge University Press:  21 February 2011

Izzard M.J. ,
Migliorato P.  and
Milne W.I.
Izzard M.J.
Affiliation:
Cambridge University, Department of Engineering, Trumpington Street, Cambridge, CB2 1PZ, England
Migliorato P.
Affiliation:
Cambridge University, Department of Engineering, Trumpington Street, Cambridge, CB2 1PZ, England
Milne W.I.
Affiliation:
Cambridge University, Department of Engineering, Trumpington Street, Cambridge, CB2 1PZ, England
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Abstract

A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) have been developed. The model is based on theories of conduction in materials with a bulkdistribution of gap states[l]. The equations are suitable for incorporation into a circuit simulator capable of transient-analysis of circuits, such as SPICE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

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References

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