Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:23:37.487Z Has data issue: false hasContentIssue false
  • English
  • Français

A new method of manufacturing high aspect ratio structures using SU8 negative photoresist

Published online by Cambridge University Press:  01 February 2011

Saydulla Persheyev  and
Mervyn John Rose
Saydulla Persheyev
Affiliation:
[email protected]@gmail.com
Mervyn John Rose
Affiliation:
[email protected], University of Dundee, Electronics Engineering and Pysics, Dundee, United Kingdom
Get access

Abstract

SU8 Negative photoresist is finding high demand in applications such as MEMS sensors and waveguides. The possibility of photolithographic patterning and high physical and dielectric properties are attracting ever more users among workers in the electronics industry and increasingly in biomedical applications. In our work we employ an original method of exposing of SU8 and create high aspect ratio structures on glass and other substrates. Dry plasma etching results of negative epoxy-based photoresist by Inductively Coupled Plasma system using gases O2 and CF4 are presented.

Keywords

biomateriallithography (deposition)microelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1272: Symposia KK/LL/NN/OO/PP – Integrated Miniaturized Materials-From Self-Assembly to Device Integration , 2010 , 1272-KK09-07
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Butefisch, S., Seideman, V.S, eideman, S., Buttgenbach Buttgenbach, Sensors and Ac Actuators A 97 97–98 (2002) 638–645 Google Scholar
2 Choi, Y.Cho, McClain, M., LaPlaca, M., Frazier, A., Allen, M. Allen, Biomedical Microdevices, Volume 9, No1, February 2007, pp.7 7–13 (7)Google Scholar
3 Chank-Park, M.B., Zhan, J., Yan, Y., Yue, C.Y., Sensors and Actuators B 101 (2004) 175–182 Google Scholar
4 Sato, H., Houshi, Y., Otsuka, T. and Shoji, S., Japanese Journal of Applied Physics Vol. 43, No. 12, 2004, pp. 8341–8344 Google Scholar
5 Ransley, J.H.T., Watari, M., Sukumaran, D., McKendry, R.A., Seshia, A.A., Microelectronic Engineering 83 (2006)1621–1625 Google Scholar
6 Ruano-Lopez, J.M., Aguirregabiria, M., Tijero, M., Arroyo, M.T., Elizalde, J., Berganzo, J., Aranburu, I., Blanco, F.J., Mayora, K., Sensors and Actuators B 114 (2006) 542–551,Google Scholar
7 Song, Yujun, Kumar, Challa S S R and Hormes, Josef “J. Micromech. Microeng.” 14 (2004) £932–940Google Scholar
8 Bohl, B., Steger, R., Zengerle, R. and Koltay, P., Journal of Micromechanics and Micr Microengineering 15 (2005) 1125 oengineering 1125–1130Google Scholar
9 Lee, C.-H., Chang, T.-W., Lee, K.-L., Lin, J.-Y. Appl. Phys. A79, 2027–2031 (2004)Google Scholar
10 Elgaid, K., McCloy, D.A., Thayne, I.G., Microelectronic Engineering 67–68 (2003) 417–421 Google Scholar
Hong, G., Holmes, A. S., Heaton, M. E., “DTIP 2003, Mandelieu – La Napoule, France, 5–7 May 2003, pp. 268–271 Google Scholar