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A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

Published online by Cambridge University Press:  15 February 2011

Ju-Hyung Lee ,
Yanzhen Xu ,
Veronica A. Burrows  and
Paul F. McMillan
Ju-Hyung Lee
Affiliation:
Department of Chemical, Bio and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe AZ 85287–6006
Yanzhen Xu
Affiliation:
Department of Chemical, Bio and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe AZ 85287–6006
Veronica A. Burrows
Affiliation:
Department of Chemical, Bio and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe AZ 85287–6006
Paul F. McMillan
Affiliation:
Materials Research Group, Department of Chemistry and Biochemistry, Arizona State University, Tempe AZ 85287–1604
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Abstract

A new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 529
Copyright
Copyright © Materials Research Society 1996

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