Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-09-13T20:20:06.596Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Method for Analyzing Thin Sidewall Inhibitor Layers

Published online by Cambridge University Press:  28 February 2011

J. P. McVittie ,
T. A. Lin  and
A. J. Bariya
J. P. McVittie
Affiliation:
Stanford Integrated Circuits LaboratoryStanford University, Stanford, CA 94305
T. A. Lin
Affiliation:
Dept. of Chemical EngineeringStanford University, Stanford, CA 94305
A. J. Bariya
Affiliation:
Stanford Integrated Circuits LaboratoryStanford University, Stanford, CA 94305
Get access

Abstract

Etch inhibitor layers are the key to anisotropy for a number of dry etch processes, yet little is known about these layers because of the difficulty in analyzing them on the side walls where they form. In this paper we will show that an Al grid suspended above an etching surface can be used to suppress ion bombardment and allow the inhibitor to form on large horizontal surfaces which can be easily analyzed. The effect of ion bombardment on the nature of the inhibitor layer can also be elucidated using this technique. In conjunction with X-ray Photoelectron Spectroscopy, this method was used to look at the polymeric inhibitor formed during Si etching in SF6/C2CIF5 with and without the presence of photoresist.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 499
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pang, S., Chen, D.C., and Uu, E.D., J. Electrochem. Soc., 133, 1479 (1986).CrossRefGoogle Scholar
2. Bruce, R.H. and Malafsky, G.P., J. Electrochem. Soc., 130, 83 (1983).Google Scholar
3. Coburn, J.W., Plas. Chem. and Plas. Proc., 2, 1 (1982).Google Scholar
4. Danner, D.A., Petrillo, E.J. and Polcari, M.R., in Plasma Processing, edited by Coburn, J.W., Gottscho, R.A. and Hess, D.W. (Mat. Res. Soc., Pittsburgh, 1986) p. 15.Google Scholar
5. McVittie, J.P., Gonzalez, C.B.,in Proc. 5th Symp. Plasma Proc., edited by Mathad, G.S., Schwartz, G.C. and Smolinsky, G. (The Electrochem. Soc., Pennington, NJ, 1985), p. 552.Google Scholar
6. Oehrlein, G.S., Clabes, J.G., and Spirto, P., J. Electrochem. Soc., 133, 1002 (1986).Google Scholar
7. Rice, D.W. and O'Kane, D.F., J. Electrochem. Soc., 123, 1308 (1976).Google Scholar
8. Horiiki, Y., Sugawara, T., Okano, H., Shibagaki, M. and Ueda, Y., Jpn. J. Phys., 20, 803 (1981).CrossRefGoogle Scholar