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New Method for a Lensless Electron Microscope: Achieving High Resolution and Overcoming Effects of Multiple Scattering

Published online by Cambridge University Press:  22 February 2011

S. Y. Tong
Affiliation:
Department of Physics and Laboratory for Surface Studies University of Wisconsin-Milwaukee, Milwaukee, WI 53201
H. Huang
Affiliation:
Department of Physics and Laboratory for Surface Studies University of Wisconsin-Milwaukee, Milwaukee, WI 53201
Hua Li
Affiliation:
Department of Physics and Laboratory for Surface Studies University of Wisconsin-Milwaukee, Milwaukee, WI 53201
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Abstract

We present the processes necessary for the development of a lensless electron microscope with a resolution of ≤ 0.6Å and an image position accuracy of ≤ 0.3Å. The technique inverts interference fringes of emitted electrons from localized sources embedded in a material. Unlike conventional methods which use the Helmholtz-Kirchhoff integral theorem, the new process starts with 3-dimensional Fourier transformation with phaseshift correction, SWEEP for forward-scattering electrons and REEP for back-scattering electrons. These processes are applicable to strong multiple scattering systems as well as systems whose source atoms are buried below the surface. Materials with long-range or local order can be studied; coupled to a small spot-sized incident beam, images of disordered materials can be formed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1) Barton, J.J., Phys. Rev. Lett. 61, 1345 (1988).Google Scholar
2) Saldin, D.K. and de Andres, P.L., Phys. Rev. Lett. 64, 1270 (1990).Google Scholar
3) Harp, G.R., Saldin, D.K. and Tonner, B.P., Phys. Rev. Lett. 65, 1012 (1990).Google Scholar
4) Wei, C.M., Zhao, T.C. and Tong, S.Y., Phys. Rev. Lett. 65, 2278 (1990).Google Scholar
5) Harp, G.R., Saldin, D.K., and Tonner, B.P., Phys. Rev. B 42, 9199 (1990).Google Scholar
6) Wei, C.M., Zhao, T.C., Tong, S.Y., Phys. Rev. B 43, March 15 (1991).Google Scholar
7) Tong, S.Y., Wei, C.M., Zhao, T.C., Huang, H., and Li, Hua, Phys. Rev. Lett. 66, 60 (1991).CrossRefGoogle Scholar
8) Tong, S.Y., Li, Hua and Huang, H., Phys. Rev. Lett., to appear.Google Scholar
9) Tong, S.Y., Li, C.H. and Lubinsky, A.R., Phys. Rev. Lett. 39, 498 (1977).Google Scholar
10) Li, C.H., Lubinsky, A.R. and Tong, S.Y., Phys. Rev. B 17, 3128 (1978).CrossRefGoogle Scholar
11) Li, H. and Tonner, B.P., Phys. Rev. B 37, 3959 (1988).Google Scholar
12) Wang, X.D., Han, Z.L., Tonner, B.P., Chen, Y. and Tong, S.Y., Science 248, 1129 (1990).Google Scholar
13) Bedrossian, P., Meade, R.D., Mortensen, K., Chen, D.M., Golovchenko, J.A., Vanderbilt, D., Phys. Rev. Lett. 63, 1257 (1989).Google Scholar
14) Lyo, I.-W., Kaxiras, E., and Avouris, Ph., Phys. Rev. Lett. 53, 1261 (1989).Google Scholar
15) Headrich, L., Robinson, I.K., Vlieg, E., Feldman, L.G., Phys. Rev. Lett. 63, 1253 (1989).CrossRefGoogle Scholar
16) Kaxiras, E., Pandey, K.C., Himpsel, F.J., Tromp, R.M., Phys. Rev. B41, 1262 (1990).Google Scholar
17) Huang, H., Tong, S.Y., Quinn, J., and Jona, F., Phys. Rev. B41, 3276 (1990).Google Scholar
18) Egelhoff, W.F. Jr., Phys. Rev. B 30, 1051 (1984).CrossRefGoogle Scholar
19) Poon, H.C. and Tong, S.Y., Phys. Rev. B 30, 6211 (1984).Google Scholar
20) Tong, S.Y., Poon, H.C. and Snider, D.R., Phys. Rev. B 32, 2096 (1985).Google Scholar
21) Xu, M.L. and Van Hove, M.A., Surface Sci. 207, 215 (1989).Google Scholar
22) Chambers, S.A., Anderson, S.B., Weaver, J.H., Phys. Rev. B 32, 4872 (1985).Google Scholar
23) Egelhoff, W.F. Jr. in Critical Reviews in Solid State and Materials Sciences, 16, 213 (1990).Google Scholar
24) Fadley, C.S., Synchrotron Radiation Research: Advances in Surface Science, R.Z., Bachrach, ed., Plenum Press, NY (1990).Google Scholar
25) Tong, S.Y., Puga, M.W., Poon, H.C. and Xu, M.L. in Chemistry and Physics of Solid Surfaces VI, eds. Vanselow, R. and Howe, R., Springer, NY (1986).Google Scholar
26) Chambers, S.A., Wagner, T.J. and Weaver, J.H., Phys. Rev. B 36, 8992 (1987).Google Scholar
27) Li, Hong and Tonner, B.P., Phys. Rev. B 40, 10241 (1989).Google Scholar
28) Poon, H.C., Snider, D.R. and Tong, S.Y., Phys. Rev. B 33, 2198 (1986).Google Scholar
29) Huang, H., Li, Hua and Tong, S.Y., to be published.Google Scholar
30) Huang, H., Li, Hua and Tong, S.Y., to be published.Google Scholar
31) Barton, J.J. and Terminello, L.J., in The Structure of Surfaces-III, eds. S.Y., Tong, M.A., Van Hove, X., Xide and K., Takayanagi, Springer, Berlin (1991).Google Scholar